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NDF11N50Z
N-Channel Power MOSFET
500 V, 0.52 W
Features
? Low ON Resistance
? Low Gate Charge
? ESD Diode ? Protected Gate
? 100% Avalanche Tested
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
V DSS
500 V
http://onsemi.com
R DS(ON) (MAX) @ 4.5 A
0.52 W
Rating
Drain ? to ? Source Voltage
Continuous Drain Current, R q JC (Note 1)
Continuous Drain Current
T A = 100 ° C, R q JC (Note 1)
Pulsed Drain Current,
t P = 10 m s
Symbol
V DSS
I D
I D
I DM
NDF
500
12
7.4
44
Unit
V
A
A
A
G (1)
N ? Channel
D (2)
Power Dissipation, R q JC
Gate ? to ? Source Voltage
Single Pulse Avalanche
Energy, I D = 10 A
P D
V GS
E AS
39
± 30
420
W
V
mJ
NDF11N50ZG
TO ? 220FP
CASE 221D
MARKING
DIAGRAM
S (3)
ESD (HBM) (JESD22 ? A114)
V esd
4000
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T A = 25 ° C) (Figure 14)
Peak Diode Recovery (Note 2)
Continuous Source Current (Body
Diode)
V ISO
dv/dt
I S
4500
4.5
12
V
V/ns
A
NDF11N50ZG
or
NDF11N50ZH
AYWW
Maximum Temperature for T L 260 ° C
Soldering Leads
Operating Junction and T J , T stg ? 55 to 150 ° C
Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NDF11N50ZH
TO ? 220FP
CASE 221AH
A = Location Code
Y = Year
WW = Work Week
Gate
Drain
Source
1. Limited by maximum junction temperature
2. I d ≤ 10.5 A, di/dt ≤ 200 A/ m s, V DD ≤ BV DSS , T J ≤ 150 ° C.
G, H
= Pb ? Free, Halogen ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
February, 2013 ? Rev. 4
1
Publication Order Number:
NDF11N50Z/D
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